IRFP A, V, Ohm, N-Channel Power. MOSFET. This N-Channel enhancement mode silicon gate power field effect transistor is an advanced. IRFP A, V, Ohm, N-channel Power MOSFET. This N-Channel enhancement mode silicon gate power field effect transistor is an advanced. IRFP, SiHFP Vishay Siliconix. FEATURES. • Dynamic dV/dt Rating. • Repetitive Avalanche Rated. • Isolated Central Mounting Hole.

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IRFP datasheet & applicatoin notes – Datasheet Archive

Product names and markings noted herein may be trademarks of their respective owners. Lead finish uncontrolled in L1.

Dimension D and E do not include mold flash. Case Temperature tr td off tf Fig.


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Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Mold flash shall not exceed 0.


IRFP, SiHFP Datasheet

Contour of slot optional. Thermal pad contour optional with dimensions D1 and E1.

Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. Please note that some Vishay documentation may still make reference to the IEC definition.

(PDF) IRFP440 Datasheet download

Xian and Mingxin actually photo. These dimensions are measured at the outermost extremes of the plastic body.

Drain Current Current regulator Same type as D. B, Mar This datasheet is subject to change without notice. It also provides greater creepage distance between pins to meet the requirements of most safety specifications.

Repetitive rating; pulse width limited by maximum junction temperature see fig.